| PART |
Description |
Maker |
| 1N4150-1 JANTXV1N4150-1 |
Signal or Computer Diode; Package: DO-35; IO (A): 0.2; Cj (pF): 2.5; Vrwm (V): 50; trr (nsec): 4; VF (V): 0.74; IR (µA): 0.1; 0.2 A, 50 V, SILICON, SIGNAL DIODE, DO-35
SWITCHING DIODE
|
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
|
| JANTXV1N4148UR-1 1N4148UR-1 CDLL4148 JAN1N4148UR-1 |
Signal or Computer Diode
SWITCHING DIODE
|
MICROSEMI[Microsemi Corporation]
|
| JANS1N6641US 1N6639US 1N6640US 1N6641US JAN1N6639U |
Signal or Computer Diode
SWITCHING DIODES
|
MICROSEMI[Microsemi Corporation]
|
| 1N4448 1N4449 1N4149 1N4151 1N4154 1N4446 1N4447 |
COMPUTER DIODE Switching
MSTB 2,5/ 5-ST BDWH:35-31 SO
VC-MP-K1 0.2 A, SILICON, SIGNAL DIODE, DO-35
|
MICROSEMI[Microsemi Corporation]
Shanghai LUNSURE Electronic Technology Co., Ltd.
MICROSEMI CORP-LAWRENCE
|
| 1N4938UR-1 JANTXV1N4938UR-1 |
Signal or Computer Diode; Package: DO-213AA; 0.1 A, SILICON, SIGNAL DIODE, DO-213AA
SWITCHING DIODE
|
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
|
| 2SC3437 E000848 |
NPN EPITAXIAL TYPE (ULTRA HIGH SPEED SWITCHING/ COMPUTER/ COUNTER APPLICATIONS)
From old datasheet system
ULTRA HIGH SPEED SWITCHING APPLICATIONS COMPUTER, COUNTER APPLICATIONS
NPN EPITAXIAL TYPE (ULTRA HIGH SPEED SWITCHING, COMPUTER, COUNTER APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
Toshiba Corporation
|
| PBYR2100CT |
Connector assemblies, Computer cables; 1 A, 100 V, 2 ELEMENT, SILICON, SIGNAL DIODE
Schottky barrier double diode
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| 1N4149 1N4449 1N4450 1N4447 1N914 1N4454 1N4150 1N |
VC-MP-K4
Signal or Computer Diode
Silicon Epitaxial Planar Diodes
SMALL SIGNAL SWITCHING DIODE
SILICON EPITAXIAL PLANAR DIODE
|
SEMTECH[Semtech Corporation]
Microsemi
Honey Technology
Chenyi Electronics
|
| JAN1N4153UR-1 JAN1N3070 |
Signal or Computer Diode; Package: DO-213AA; IO (A): 0.075; Cj (pF): 2; Vrwm (V): 50; trr (nsec): 4; VF (V): 0.81; IR (µA): 0.05; 0.15 A, SILICON, SIGNAL DIODE, DO-213AA
Signal or Computer Diode; Package: DO-7; IO (A): 0.1; IFSM (A): 2; Cj (pF): 5; Vrwm (V): 175; trr (nsec): 50; VF (V): 1; IR (µA): 0.1; 0.1 A, SILICON, SIGNAL DIODE, DO-7
|
Microsemi, Corp.
|
| JAN1N6642 JAN1N6643 1N6638 |
Signal or Computer Diode
|
Microsemi
|
| 1N4447 |
Signal or Computer Diode
|
Microsemi
|
| 1N459AE3 1N458AE3 1N457E3 1N457AE3 |
Signal or Computer Diode
|
Microsemi
|
